SI7748DP-T1-GE3 datasheet(3/13 Pages) VISHAY

部品番号	SI7748DP-T1-GE3

部品情報	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Document Number: 68785

S-81714-Rev. A, 04-Aug-08

www.vishay.com

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Vishay Siliconix

Si7748DP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

16

32

48

64

80

0.0

0.5

1.0

1.5

2.0

2.5

VDS - Drain-to-Source Voltage (V)

VGS =10thru 4 V

VGS =3 V

0.003

0.004

0.005

0.006

0.007

0.008

014

28

42

56

70

ID - Drain Current (A)

VGS =4.5 V

VGS =10 V

0

2

4

6

8

10

0.0

12.4

24.8

37.2

49.6

62.0

Qg - Total Gate Charge (nC)

VDS =15 V

VDS =10 V

ID =10A

VDS =20 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

01

2

3

45

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

0

900

1800

2700

3600

4500

0

5

10

15

20

25

30

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

Crss

0.3

0.6

0.9

1.2

1.5

1.8

- 50

- 25

0

25

50

75

100

125

150

TJ -Junction Temperature (°C)

VGS =10 V

VGS =4.5 V

ID =20A

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