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SI7792DP-T1-GE3 データシート(PDF) 1 Page - Vishay Siliconix

部品番号 SI7792DP-T1-GE3
部品情報  N-Channel 30 V (D-S) MOSFET with Schottky Diode
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Vishay Siliconix
Si7792DP
New Product
Document Number: 67641
S11-0856-Rev. A, 02-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
SkyFET™ Monolithic TrenchFET® Gen III
Power MOSFET and Schottky Diode
100 % Rg Tested
100 % Avalanche Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Low Side in Vcore, System and Memory
- Notebook PCs
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)
a
Qg (Typ.)
30
0.0021 at VGS = 10 V
60
41 nC
0.0026 at VGS = 4.5 V
60
Ordering Information: Si7792DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK® SO-8
Bottom View
N-Channel MOSFET
G
S
D
Schottky
Diode
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
60a
A
TC = 70 °C
60a
TA = 25 °C
40.6b, c
TA = 70 °C
32.5b, c
Pulsed Drain Current (t = 300 µs)
IDM
100
Continuous Source-Drain Diode Current
TC = 25 °C
IS
60a
TA = 25 °C
5.6b, c
Single Pulse Avalanche Current
L =
0.1 mH
IAS
50
Single Pulse Avalanche Energy
EAS
125
mJ
Maximum Power Dissipation
TC = 25 °C
PD
104
W
TC = 70 °C
66.6
TA = 25 °C
6.25b, c
TA = 70 °C
4.0b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
t
 10 s
RthJA
15
20
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
0.9
1.2


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