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SI7792DP-T1-GE3 データシート(PDF) 1 Page - Vishay Siliconix |
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SI7792DP-T1-GE3 データシート(HTML) 1 Page - Vishay Siliconix |
1 / 13 page Vishay Siliconix Si7792DP New Product Document Number: 67641 S11-0856-Rev. A, 02-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES • Halogen-free According to IEC 61249-2-21 Definition • SkyFET™ Monolithic TrenchFET® Gen III Power MOSFET and Schottky Diode • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Low Side in Vcore, System and Memory - Notebook PCs PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a Qg (Typ.) 30 0.0021 at VGS = 10 V 60 41 nC 0.0026 at VGS = 4.5 V 60 Ordering Information: Si7792DP-T1-GE3 (Lead (Pb)-free and Halogen-free) 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK® SO-8 Bottom View N-Channel MOSFET G S D Schottky Diode Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 54 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 60a A TC = 70 °C 60a TA = 25 °C 40.6b, c TA = 70 °C 32.5b, c Pulsed Drain Current (t = 300 µs) IDM 100 Continuous Source-Drain Diode Current TC = 25 °C IS 60a TA = 25 °C 5.6b, c Single Pulse Avalanche Current L = 0.1 mH IAS 50 Single Pulse Avalanche Energy EAS 125 mJ Maximum Power Dissipation TC = 25 °C PD 104 W TC = 70 °C 66.6 TA = 25 °C 6.25b, c TA = 70 °C 4.0b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t 10 s RthJA 15 20 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 0.9 1.2 |
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同様の説明 - SI7792DP-T1-GE3 |
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