SI7852ADP datasheet(4/13 Pages) VISHAY

部品番号	SI7852ADP

部品情報	N-Channel 80-V (D-S) MOSFET

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Document Number: 73988

S09-0223-Rev. C, 09-Feb-09

Vishay Siliconix

Si7852ADP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

1

0.01

0.001

0.1

10

100

TJ = 25 °C

TJ = 150 °C

- 1.4

- 1.1

- 0.8

- 0.5

- 0.2

0.1

0.4

0.7

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

ID =5mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.02

0.04

0.06

0.08

0.10

4.0

5.2

6.4

7.6

8.8

10.0

VGS - Gate-to-Source Voltage (V)

TA = 25 °C

TA = 125 °C

ID =10A

0

40

80

120

160

200

0

1

0

.

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

0.01

100

1

100

0.01

0.1

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1ms

10 ms

100 ms

DC

0.1

1

10

TA = 25 °C

Single Pulse

Limited byRDS(on)*

1s

10 s

同様の部品番号 - SI7852ADP

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI7852AD	320Kb / 13P	N-Channel 80-V (D-S) MOSFET 01-Jan-2022

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