SI7960DP-T1-GE3 datasheet(2/12 Pages) VISHAY

部品番号	SI7960DP-T1-GE3

部品情報	Dual N-Channel 60-V (D-S) MOSFET

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Document Number: 73075

S09-0223-Rev. B, 09-Feb-09

Vishay Siliconix

Si7960DP

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1

3

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

1

µA

VDS = 60 V, VGS = 0 V, TJ = 55 °C

5

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

30

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 9.7 A

0.017

0.021

Ω

VGS = 4.5 V, ID = 8.9 A

0.020

0.025

Forward Transconductancea

gfs

VDS = 15 V, ID = 9.7 A

33

S

Diode Forward Voltagea

VSD

IS = 2.9 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = 30 V, VGS = 10 V, ID = 9.7 A

49

75

nC

Gate-Source Charge

Qgs

5.7

Gate-Drain Charge

Qgd

8.6

Gate Resistance

Rg

f = 1 MHz

2

Ω

Turn-On Delay Time

td(on)

VDD = 30 V, RL = 30 Ω

ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω

12

20

ns

Rise Time

tr

12

20

Turn-Off Delay Time

td(off)

60

90

Fall Time

tf

17

30

Source-Drain Reverse Recovery Time

trr

IF = 2.9 A, dI/dt = 100 A/µs

30

60

Output Characteristics

0

5

10

15

20

25

30

35

40

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 V thru 4 V

VDS - Drain-to-Source Voltage (V)

3V

Transfer Characteristics

0

5

10

15

20

25

30

35

40

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

同様の部品番号 - SI7960DP-T1-GE3

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI7960DP	348Kb / 13P	Dual N-Channel 60-V (D-S) MOSFET Rev. B, 09-Feb-09
Vishay Siliconix	SI7960DP	348Kb / 13P	Dual N-Channel 60-V (D-S) MOSFET Rev. B, 09-Feb-09

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