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SI7980DP-T1-GE3 データシート(PDF) 5 Page - Vishay Siliconix |
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SI7980DP-T1-GE3 データシート(HTML) 5 Page - Vishay Siliconix |
5 / 18 page Document Number: 68391 S-83039-Rev. C, 29-Dec-08 www.vishay.com 5 Vishay Siliconix Si7980DP CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-DrainVoltage(V) 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 I D = 250 mA T J - Temperature (°C) I D =5mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.012 0.024 0.036 0.048 0.060 0 246 8 10 VGS - Gate-to-Source Voltage (V) T J = 25 °C T J = 125 °C I D =5A 0 12 24 36 48 60 0 1 1 1 0 0 . 0 0.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient V DS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 T A = 25 °C Single Pulse 10 ms 100 ms 1s 10 s DC Limited byR DS(on)* BVDSS Limited 1ms |
同様の部品番号 - SI7980DP-T1-GE3 |
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同様の説明 - SI7980DP-T1-GE3 |
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