SIA444DJT-T1-GE3 datasheet(1/8 Pages) VISHAY

部品番号	SIA444DJT-T1-GE3

部品情報	N-Channel 30 V (D-S) MOSFET

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Vishay Siliconix

SiA444DJT

New Product

Document Number: 67056

S11-1655-Rev. C, 15-Aug-11

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

New Thermally Enhanced PowerPAK®

SC-70 Package

- Small Footprint Area

- Ultra-Thin 0.6 mm height

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

DC/DC Converter

•

High Frequency Switching

Notes:

a. Package limited

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/ppg?73257). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A)

a

Qg (Typ.)

30

0.017 at VGS = 10 V

12

5 nC

0.022 at VGS = 4.5 V

12

Marking Code

X X X

A M X

Lot Traceability

and Date code

Part # code

Ordering Information:

SiA444DJT-T1-GE3 (Lead (Pb)-free and Halogen-free)

Thin PowerPAK SC-70-6L-Single

2.05 mm

0.6 mm

6

5

4

D

S

3

2

1

G

D

S

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

12a

A

TC = 70 °C

12a

TA = 25 °C

11a, b, c

TA = 70 °C

8.8b, c

Pulsed Drain Current (t = 300 µs)

IDM

40

Continuous Source-Drain Diode Current

TC = 25 °C

IS

12a

TA = 25 °C

2.9b, c

Maximum Power Dissipation

TC = 25 °C

PD

19

W

TC = 70 °C

12

TA = 25 °C

3.5b, c

TA = 70 °C

2.2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

 5 s

RthJA

28

36

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

5.3

6.5

同様の部品番号 - SIA444DJT-T1-GE3

メーカー	部品番号	データシート	部品情報
VBsemi Electronics Co.,...	SIA444DJT-T1-GE3	1Mb / 10P	N-Channel 30 V (D-S) MOSFET

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