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SIA519EDJ-T1-GE3 データシート(PDF) 8 Page - Vishay Siliconix |
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SIA519EDJ-T1-GE3 データシート(HTML) 8 Page - Vishay Siliconix |
8 / 14 page www.vishay.com 8 Document Number: 65176 S09-2685-Rev. B, 14-Dec-09 Vishay Siliconix SiA519EDJ New Product P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Gate Current vs. Gate-Source Voltage Output Characteristics On-Resistance vs. Drain Current and Gate Voltage 0 1 2 3 4 0369 12 15 18 IGSS at 25 °C VGS - Gate-to-Source Voltage (V) 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS =5 V thru 3.5 V VGS =1.5 V VGS =2 V VGS =2.5 V VGS =3 V VDS - Drain-to-Source Voltage (V) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 3 6 9 12 15 VGS =4.5 V VGS =2.5 V ID - Drain Current (A) Gate Current vs. Gate-Source Voltage Transfer Characteristics Capacitance VGS - Gate-to-Source Voltage (V) 10-10 10-9 10-8 10-7 10-6 10-5 10-4 10-3 10-2 0 3 6 9 12 15 18 10-11 10-12 TJ = 150 °C TJ = 25 °C 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 TC = 25 °C TC = 125 °C TC =- 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 200 400 600 800 036 9 12 Ciss Coss VDS - Drain-to-Source Voltage (V) |
同様の部品番号 - SIA519EDJ-T1-GE3 |
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同様の説明 - SIA519EDJ-T1-GE3 |
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