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SS12P4CHM3-87A データシート(PDF) 1 Page - Vishay Siliconix |
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1 / 5 page Document Number: 89141 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 13-May-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Schottky Barrier Rectifier SS12P4C Vishay General Semiconductor New Product TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal impedance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Notes (1) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink (2) Free air, mounted on recommended copper pad area PRIMARY CHARACTERISTICS IF(AV) 2 x 6.0 A VRRM 40 V IFSM 150 A EAS 20 mJ VF at IF = 6.0 A 0.40 V TJ max. 125 °C TO-277A (SMPC) K 2 1 Anode 1 Anode 2 Cathode K eSMPTM Series MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS12P4C UNIT Device marking code S124C Maximum repetitive peak reverse voltage VRRM 40 V Maximum average forward rectified current (fig. 1) (1) total device IF(AV) 12 A per diode 6.0 Maximum average forward rectified current (2) total device IF(AV) 3.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS 20 mJ Peak repetitive reverse current at tp = 2 µs, 1 kHz, at TJ = 25 °C per diode IRRM 1.0 A Operating junction and storage temperature range TJ, TSTG - 55 to + 125 °C |
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