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BC369 データシート(PDF) 1 Page - Siemens Semiconductor Group

部品番号 BC369
部品情報  PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
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メーカー  SIEMENS [Siemens Semiconductor Group]
ホームページ  http://www.siemens.com/
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BC369 データシート(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
PNP Silicon AF Transistor
BC 369
5.91
Maximum Ratings
Type
Ordering Code
Marking
Package1)
Pin Configuration
BC 369
C62702-C748
TO-92
1
2
3
E
C
B
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
20
V
Peak collector current
ICM
2
Base current
IB
100
mA
Collector current
IC
1A
Junction temperature
Tj
150
˚C
Total power dissipation, TC = 90 ˚C2)
Ptot
0.8 (1)
W
Storage temperature range
Tstg
– 65 … + 150
Collector-base voltage
VCB0
25
Thermal Resistance
Junction - ambient2)
Rth JA
156
K/W
Emitter-base voltage
VEB0
5
Peak base current
IBM
200
Junction - case3)
Rth JC
75
1)
For detailed information see chapter Package Outlines.
2)
If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm
× 10 mm large copper area for
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
3)
Mounted on Al heat sink 15 mm
× 25 mm × 0.5 mm.
q
High current gain
q
High collector current
q
Low collector-emitter saturation voltage
q
Complementary type: BC 368 (NPN)
1
2
3


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