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BC369 データシート(PDF) 1 Page - Siemens Semiconductor Group |
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BC369 データシート(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page Semiconductor Group 1 PNP Silicon AF Transistor BC 369 5.91 Maximum Ratings Type Ordering Code Marking Package1) Pin Configuration BC 369 C62702-C748 – TO-92 1 2 3 E C B Parameter Symbol Values Unit Collector-emitter voltage VCE0 20 V Peak collector current ICM 2 Base current IB 100 mA Collector current IC 1A Junction temperature Tj 150 ˚C Total power dissipation, TC = 90 ˚C2) Ptot 0.8 (1) W Storage temperature range Tstg – 65 … + 150 Collector-base voltage VCB0 25 Thermal Resistance Junction - ambient2) Rth JA ≤ 156 K/W Emitter-base voltage VEB0 5 Peak base current IBM 200 Junction - case3) Rth JC ≤ 75 1) For detailed information see chapter Package Outlines. 2) If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C. 3) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary type: BC 368 (NPN) 1 2 3 |
同様の部品番号 - BC369 |
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同様の説明 - BC369 |
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