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TSHF5410 データシート(PDF) 1 Page - Vishay Siliconix |
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TSHF5410 データシート(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 81303 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.3, 25-Jun-09 1 High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero TSHF5410 Vishay Semiconductors DESCRIPTION TSHF5410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): ∅ 5 • Leads with stand-off • Peak wavelength: λ p = 890 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 22° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 12 MHz • Good spectral matching with Si photodetectors • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition APPLICATIONS • Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements • Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3 MHz) Note Test conditions see table “Basic Characteristics” Note MOQ: minimum order quantity Note Tamb = 25 °C, unless otherwise specified 94 8390 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λ P (nm) tr (ns) TSHF5410 70 ± 22 890 30 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHF5410 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge forward current tp = 100 µs IFSM 1.5 A Power dissipation PV 160 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W |
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