Document Number: 81303

www.vishay.com

Rev. 1.3, 25-Jun-09

1

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

TSHF5410

Vishay Semiconductors

DESCRIPTION

TSHF5410 is an infrared, 890 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

high speed, molded in a clear, untinted plastic package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm):

∅ 5

• Leads with stand-off

• Peak wavelength:

λ

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:

ϕ = ± 22°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Compliant

to

RoHS

directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS

• Infrared high speed remote control and free air data

transmission systems with high modulation frequencies or

high data transmission rate requirements

• Transmission systems according to IrDA requirements and

for carrier frequency based systems (e.g. ASK/FSK -

coded, 450 kHz or 1.3 MHz)

Note

Test conditions see table “Basic Characteristics”

Note

MOQ: minimum order quantity

Note

94 8390

PRODUCT SUMMARY

COMPONENT

ϕ (deg)

λ

TSHF5410

70

± 22

890

30

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TSHF5410

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

5V

Forward current

100

mA

Peak forward current

200

mA

Surge forward current

1.5

A

Power dissipation

160

mW

Junction temperature

100

°C

Operating temperature range

- 40 to + 85

°C

Storage temperature range

- 40 to + 100

°C

Soldering temperature

t

≤ 5 s, 2 mm from case

260

°C

Thermal resistance junction/ambient

J-STD-051, leads 7 mm,

soldered on PCB

230

K/W