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BC817-16W データシート(PDF) 2 Page - Siemens Semiconductor Group |
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BC817-16W データシート(HTML) 2 Page - Siemens Semiconductor Group |
2 / 5 page Semiconductor Group 2 Dec-19-1996 BC 817-16W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BC 817 W IC = 10 mA, IB = 0 , BC 818 W V(BR)CEO 25 45 - - - - V Collector-base breakdown voltage IC = 10 µA, IB = 0 , BC 817 W IC = 10 µA, IB = 0 , BC 818 W V(BR)CBO 30 50 - - - - Base-emitter breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector-base cutoff current VCB = 25 V, TA = 25 °C VCB = 25 V, TA = 150 °C ICBO - - - - 50 100 nA µA Emitter cutoff current VEB = 4 V, IC = 0 IEBO - - 100 nA DC current gain IC = 100 mA, VCE = 1 V, BC ... 16 W IC = 100 mA, VCE = 1 V, BC ... 25 W IC = 100 mA, VCE = 1 V, BC ... 40 W IC = 300 mA, VCE = 1 V, BC ... 16 W IC = 300 mA, VCE = 1 V, BC ... 25 W IC = 300 mA, VCE = 1 V, BC ... 40 W hFE 170 100 60 250 160 100 - - - 350 250 160 - - - 630 400 250 - Collector-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA VCEsat - - 0.7 V Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA VBEsat - - 1.2 1) Pulse test: t < 300 µs; D < 2% |
同様の部品番号 - BC817-16W |
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同様の説明 - BC817-16W |
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