BC818-40 datasheet(3/5 Pages) SIEMENS

部品番号	BC818-40

部品情報	NPN Silicon AF Transistors

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Semiconductor Group

3

BC 817

BC 818

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

–

DC current gain1)

IC = 100 mA; VCE = 1 V

BC 817-16, BC 818-16

BC 817-25, BC 818-25

BC 817-40, BC 818-40

IC = 300 mA; VCE = 1 V

BC 817-16, BC 818-16

BC 817-25, BC 818-25

BC 817-40, BC 818-40

hFE

100

160

250

60

100

170

160

250

350

–

250

400

630

–

V

Collector-emitter breakdown voltage

IC = 10 mA

BC 817

BC 818

V(BR)CE0

45

25

–

nA

µA

Collector cutoff current

VCB = 25 V

VCB = 25 V, TA = 150 ˚C

ICB0

–

100

50

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 100

µA

BC 817

BC 818

V(BR)CB0

50

30

–

Emitter-base breakdown voltage, IE = 10

µA

V(BR)EB0

5––

V

Collector-emitter saturation voltage1)

IC = 500 mA; IB = 50 mA

VCEsat

–

0.7

Base-emitter saturation voltage1)

IC = 500 mA; IB = 50 mA

VBEsat

––2

nA

Emitter cutoff current, VEB = 4 V

IEB0

–

100

MHz

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz

fT

–

170

–

AC characteristics

pF

Output capacitance

VCB = 10 V, f = 1 MHz

Cobo

–6–

Input capacitance

VEB = 0.5 V, f = 1 MHz

Cibo

–60

–

1)

Pulse test: t

≤ 300 µs, D ≤ 2%.

同様の部品番号 - BC818-40

メーカー	部品番号	データシート	部品情報
Infineon Technologies A...	BC818-40	47Kb / 5P	NPN Silicon AF Transistors Nov-29-2001
GUANGDONG HOTTECH INDUS...	BC818-40	186Kb / 2P	Plastic-Encapsulate Transistors
Diotec Semiconductor	BC818-40	188Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors
Galaxy Semi-Conductor H...	BC818-40	161Kb / 4P	NPN General Purpose Amplifier
Diotec Semiconductor	BC818-40	174Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors

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同様の説明 - BC818-40

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