BCP29 datasheet(5/5 Pages) SIEMENS

部品番号	BCP29

部品情報	NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)

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BCP 29

BCP 49

Collector-emitter saturation voltage

IC = f (VCEsat)

hFE = 1000

Base-emitter saturation voltage

IC = f (VBEsat)

hFE = 1000

DC current gain hFE = f (IC)

VCE = 10 V

Collector-base capacitance CCB0 = f (VCB0)

Emitter-base capacitance CEB0 = f (VEB0)

同様の部品番号 - BCP29

メーカー	部品番号	データシート	部品情報
Infineon Technologies A...	BCP29	49Kb / 5P	NPN Silicon Darlington Transistors Nov-29-2001
Diotec Semiconductor	BCP29	241Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors

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