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BCP49 データシート(PDF) 2 Page - Siemens Semiconductor Group |
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BCP49 データシート(HTML) 2 Page - Siemens Semiconductor Group |
2 / 5 page Semiconductor Group 2 BCP 29 BCP 49 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. DC current gain1) IC = 100 µA, VCE = 1 V BCP 29 BCP 49 IC = 10 mA, VCE = 5 V BCP 29 BCP 49 IC = 100 mA, VCE = 5 V BCP 29 BCP 49 IC = 500 mA, VCE = 5 V BCP 29 BCP 49 V Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BCP 29 BCP 49 V(BR)CE0 30 60 – – – – nA nA µA µA Collector-base cutoff current VCB = 30 V, IE = 0 BCP 29 VCB = 60 V, IE = 0 BCP 49 VCB = 30 V, IE = 0, TA = 150 ˚C BCP 29 VCB = 60 V, IE = 0, TA = 150 ˚C BCP 49 ICB0 – – – – – – – – 100 100 10 10 Unit Values Parameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 100 µA, IB = 0 BCP 29 BCP 49 V(BR)CB0 40 80 – – – – Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EB0 10 – – V Collector-emitter saturation voltage IC = 100 mA, IB = 0.1 mA VCEsat – – 1.0 – hFE 4000 2000 10000 4000 20000 10000 4000 2000 – – – – – – – – – – – – – – – – Base-emitter saturation voltage IC = 100 mA, IB = 0.1 mA VBEsat – – 1.5 nA Emitter-base cutoff current VEB = 4 V, IC = 0 IEB0 – – 100 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. |
同様の部品番号 - BCP49 |
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同様の説明 - BCP49 |
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