BCW60D datasheet(2/9 Pages) SIEMENS

部品番号	BCW60D

部品情報	NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)

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2 / 9 page

Semiconductor Group

2

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCE0

V

Peak collector current

ICM

Collector current

IC

mA

Junction temperature

Tj

˚C

Total power dissipation, TS = 71 ˚C

Ptot

mW

Storage temperature range

Tstg

Collector-base voltage

VCB0

Thermal Resistance

32

100

200

330

150

– 65 … + 150

Emitter-base voltage

VEB0

Peak base current

IBM

200

32

45

32

45

BCW 60 FF

BCW 60

BCX 70

5

Junction - ambient1)

Rth JA

K/W

Junction - soldering point

Rth JS

≤ 310

≤ 240

1)

Package mounted on epoxy pcb 40 mm

× 40 mm × 1.5 mm/6 cm2 Cu.

BCW 60

BCX 70

同様の部品番号 - BCW60D

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	BCW60D	42Kb / 8P	NPN general purpose transistors 1999 Apr 22
NXP Semiconductors	BCW60D	126Kb / 6P	NPN general purpose transistors 1999 Apr 22
Samsung semiconductor	BCW60D	35Kb / 1P	NPN EPITAXIAL SILICON TRANSISTOR
NXP Semiconductors	BCW60D	126Kb / 6P	NPN general purpose transistors 1999 Apr 22
Fairchild Semiconductor	BCW60D	31Kb / 2P	NPN EPITAXIAL SILICON TRANSISTOR

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同様の説明 - BCW60D

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