データシートサーチシステム |
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BF1012S データシート(PDF) 1 Page - Siemens Semiconductor Group |
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BF1012S データシート(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page BF 1012S Semiconductor Group 1 Au -25-1998 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package Ordering Code 3 = G2 Q62702-F1627 1 = S NYs 4 = G1 SOT-143 BF 1012S 2 = D Maximum Ratings Parameter Symbol Value Unit VDS 16 Drain-source voltage V mA 25 ID Continuos drain current Gate 1/gate 2 peak source current 10 ± IG1/2SM + VG1SE 3 Gate 1 (external biasing) V mW Ptot Total power dissipation, TS ≤ 76 °C 200 Storage temperature °C -55 ...+150 Tstg Tch 150 Channel temperature Thermal Resistance ≤370 K/W Channel - soldering point Rthchs Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. Semiconductor Group 1 1998-11-01 |
同様の部品番号 - BF1012S |
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同様の説明 - BF1012S |
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