データシートサーチシステム |
|
BF660 データシート(PDF) 2 Page - Siemens Semiconductor Group |
|
BF660 データシート(HTML) 2 Page - Siemens Semiconductor Group |
2 / 3 page Semiconductor Group 2 BF 660 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Unit Values Parameter Symbol min. typ. max. DC Characteristics AC Characteristics V Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR) CE0 30 – – nA Collector cutoff current VCB = 20 V, IE = 0 ICB0 ––50 – DC current gain IC = 3 mA, VCE = 10 V hFE 30 – – Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR) CB0 40 – – Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR) EB0 4–– MHz Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz fT – 700 – pF Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Ccb – 0.6 – Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Cce – 0.28 – |
同様の部品番号 - BF660 |
|
同様の説明 - BF660 |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |