BF999 datasheet(2/5 Pages) SIEMENS

部品番号	BF999

部品情報	Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)

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Semiconductor Group

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BF 999

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

V

Drain-source breakdown voltage

ID = 10

µA, – VGS = 4 V

V(BR) DS

20

–

nA

Gate-source leakage current

± VGS = 5 V, VDS = 0

± IGSS

––50

Gate-source breakdown voltage

± IGS = 10 mA, VDS = 0

± V(BR) GSS

6.5

–

12

V

Gate-source pinch-off voltage

VDS = 10 V, ID = 20

µA

– VGS (p)

–

2.5

mA

Drain current

VDS = 10 V, VGS = 0

IDSS

5–18

mS

Forward transconductance

VDS = 10 V, ID = 10 mA, f = 1 kHz

gfs

14

16

–

pF

Output capacitance

VDS = 10 V, ID = 10 mA, f = 1 MHz

Cdss

–1–

Noise figure (test circuit)

VDS = 10 V, ID = 10 mA, f = 200 MHz,

GG = 2 mS, GL = 0.5 mS

F

–1–

pF

Gate input capacitance

VDS = 10 V, ID = 10 mA, f = 1 MHz

Cgss

–

2.5

–

fF

Reverse transfer capacitance

VDS = 10 V, ID = 10 mA, f = 1 MHz

Cdg

–25

–

dB

Power gain

(test circuit)

VDS = 10 V, ID = 10 mA, f = 200 MHz,

GG = 2 mS, GL = 0.5 mS

Gp

–25

–

AC Characteristics

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC Characteristics

同様の部品番号 - BF999

メーカー	部品番号	データシート	部品情報
Infineon Technologies A...	BF999	133Kb / 5P	Silicon N-Channel MOSFET Triode Nov-08-2002
	BF999	62Kb / 6P	Silicon N-Channel MOSFET Triode 2007-04-20
	BF999	62Kb / 6P	Silicon N-Channel MOSFET Triode 2007-04-20

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同様の説明 - BF999

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Infineon Technologies A...	BF999	62Kb / 6P	Silicon N-Channel MOSFET Triode 2007-04-20
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