BC856A datasheet(1/5 Pages) HTSEMI

部品番号	BC856A

部品情報	TRANSISTOR (PNP)

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BC856A,B

BC857A, B,C

BC858A, B,C

FEATURES

Ideally suited for automatic insertion

For Switching and AF Amplifier Applications

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

BC856

BC857

BC858

-80

-50

-30

V

VCEO

Collector-Emitter Voltage

BC856

BC857

BC858

-65

-45

-30

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current –Continuous

-0.1

A

PC

Collector Power Dissipation

200

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65-150

℃

DEVICE MARKING

BC856A=3A; BC856B=3B;

BC857A=3E;BC857B=3F;BC857C=3G;

BC858A=3J; BC858B=3K; BC858C=3L

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

TRANSISTOR (PNP)

１　

Ｄａｔｅ：２０１１／０５

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