データシートサーチシステム |
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SD103BW データシート(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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SD103BW データシート(HTML) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
1 / 2 page SCHOTTKY DIODES FEATURES Low forward voltage drop Guard ring construction for transient protection Negligible reverse recovery time Low reverse capacitance MARKING: SD103AW: S4 SD103BW: S5 SD103CW: S6 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃ Parameter Symbol SD103AW SD103BW SD103CW Unit Peak Repetitive Peak reverse voltage Working Peak DC Blocking Voltage VRRM VRWM VR 40 30 20 V RMS Reverse Voltage VR(RMS) 28 21 14 V Forward Continuous Current IFM 350 mA Repetitive Peak Forward Current @t≤1.0s IFRM 1.5 A Power Dissipation Pd 500 mW Thermal Resistance Junction to Ambient RθJA 250 ℃ /W Storage temperature TSTG -65~+1 50 ℃ Electrical Ratings @TA=25 ℃ Parameter Symbol Min. Typ. Max. Unit Conditions Reverse Breakdown Voltage SD103AW SD103BW SD103CW V (BR)R 40 30 20 V IR=100μA IR=100μA IR=100μA Forward voltage VF 0.37 0.60 V IF=20mA IF=200mA Reverse current SD103AW SD103BW SD103CW IRM 5.0 μA VR=30V VR=20V VR=10V Capacitance between terminals CT 50 pF VR=0V,f=1.0MHz Reverse Recovery Time trr 10 ns IF=IR=200mA Irr=0.1XIR,RL=100Ω SOD-123 SOD-123 - + SD103AW-SD103CW 1 Date:2011/05 www.htsemi.com semiconductor JinYu |
同様の部品番号 - SD103BW |
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同様の説明 - SD103BW |
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