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31DQ10G-M3 データシート(PDF) 1 Page - Vishay Siliconix |
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31DQ10G-M3 データシート(HTML) 1 Page - Vishay Siliconix |
1 / 6 page VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3 www.vishay.com Vishay Semiconductors Revision: 19-Sep-11 1 Document Number: 93322 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop • High purity, high temperature epoxy encapsulation forenhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long termreliability • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for commercial level • Halogen-free according to IEC 61249-2-21 definition (-M3 only) DESCRIPTION The VS-31DQ..G... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY Package DO-201AD (C-16) IF(AV) 3.3 A VR 90 V, 100 V VF at IF See Electrical table IRM max. 3.0 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 3.0 mJ Cathode Anode C-16 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 3.3 A VRRM 90/100 V IFSM tp = 5 μs sine 370 A VF 3 Apk, TJ = 25 °C 0.85 V TJ - 40 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL VS-31DQ09G VS-31DQ09G-M3 VS-31DQ10G VS-31DQ10G-M3 UNITS Maximum DC reverse voltage VR 90 90 100 100 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 4 IF(AV) 50 % duty cycle at TC = 53.4 °C, rectangular waveform 3.3 A Maximum peak one cycle non-repetitive surge current, TJ = 25 °C See fig. 6 IFSM 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied 370 10 ms sine or 6 ms rect. pulse 60 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, 18 μs square pulse 3.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A |
同様の部品番号 - 31DQ10G-M3 |
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同様の説明 - 31DQ10G-M3 |
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