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TS1002 データシート(PDF) 10 Page - Touchstone Semiconductor Inc |
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TS1002 データシート(HTML) 10 Page - Touchstone Semiconductor Inc |
10 / 13 page TS1002/TS1004 Page 10 TS1002_4DS r1p0 RTFDS In the event that an external RLOAD in parallel with CLOAD appears in the application, the use of an RISO results in gain accuracy loss because the external series RISO forms a voltage-divider with the external load resistor RLOAD. Configuring the TS1002 or the TS1004 into a Nanowatt Analog Comparator Although optimized for use as an operational amplifier, these amplifiers can also be used as a rail- to-rail I/O comparator as illustrated in Figure 7. External hysteresis can be employed to minimize the risk of output oscillation. The positive feedback circuit causes the input threshold to change when the output voltage changes state. The diagram in Figure 8 illustrates the amplifiers’ analog comparator hysteresis band and output transfer characteristic. The design of an analog comparator using the TS1002 or the TS1004 is straightforward. In this application, a 1.5-V power supply (VDD) was used and the resistor divider network formed by RD1 and RD2 generated a convenient reference voltage (VREF) for the circuit at ½ the supply voltage, or 0.75V, while keeping the current drawn by this resistor divider low. Capacitor C1 is used to filter any extraneous noise that could couple into the amplifer’s inverting input. In this application, the desired hysteresis band was set to 100mV (VHYB) with a desired high trip-point (VHI) set at 1V and a desired low trip-point (VLO) set at 0.9V. Since these amplifers draw very little supply current (0.6µA per amplifier, typical), it is desired that the design of an analog comparator using these amplfiers should also use as little current as practical. The first step in the design, therefore, was to set the feedback resistor R3: R3 = 10MΩ Calculating a value for R1 is given by the following expression: R1 = R3 x (VHYB/VDD) Substituting VHYB = 100mV, VDD = 1.5V, and R3 = 10MΩ into the equation above yields: R1 = 667kΩ The following expression was then used to calculate a value for R2: R2 = 1/[VHI/(VREF x R1) – (1/R1) – (1/R3)] Substituting VHI = 1V, VREF = 0.75V, R1 = 667kΩ, and R3 = 10MΩ into the above expression yields: R2 = 2.5MΩ Figure 8: Analog Comparator Hysteresis Band and Output Switching Points. Figure 7: A NanoWatt Analog Comparator with User- Programmable Hysteresis. Figure 6: TS1002/TS1004 Transient Response for RISO = 50kΩ and CLOAD = 500pF. VIN VOUT |
同様の部品番号 - TS1002 |
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同様の説明 - TS1002 |
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