MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

2N23__

SYMBOL

22

23

24

25

26

27

28

29 UNITS

Peak Repetitive Forward Voltage

VDRM

25

50

100

150

200

250

300

400

V

Peak Repetitive Reverse Voltage

VRRM

25

50

100

150

200

250

300

400

V

Non-Repetitive Peak Reverse Voltage

VRSM

40

75

150

225

300

350

400

500

V

RMS On-State Current

IT(RMS)

1.6

A

Average On-State Current (TC=85°C)

IT(AV)

1.0

A

Peak One Cycle Surge (t=8.3ms)

ITSM

15

A

Peak Gate Power

PGM

0.10

W

Average Gate Power

PG(AV)

0.01

W

Peak Gate Current

IGM

0.10

A

Peak Gate Voltage

VGM

6.0

V

Junction Temperature

TJ

-65 to +125

°C

Storage Temperature

Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IDRM, IRRM

Rated VDRM, VRRM, RGK=1.0kΩ

5.0

μA

IGT

VD=6.0V, RL=100Ω

200

μA

IH

VD=6.0V, RGK=1.0kΩ

2.0

mA

VGT

VD=6.0V, RL=100Ω

0.8

V

VTM

ITM=1.0A, tp=380μs

1.5

V

2N2322 2N2326

2N2323 2N2327

2N2324 2N2328

2N2325 2N2329

SILICON CONTROLLED RECTIFIER

1.6 AMPS, 25 THRU 400 VOLTS

TO-39 CASE

Central

Semiconductor Corp.

TM

R0 (11-December 2008)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2322

Series types are hermetically sealed Silicon

Controlled Rectifiers designed for sensing

circuit applications and control systems.

MARKING: FULL PART NUMBER