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BUZ10 データシート(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ10 データシート(HTML) 1 Page - Siemens Semiconductor Group |
1 / 9 page Semiconductor Group 1 07/96 BUZ 10 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 10 50 V 23 A 0.07 Ω TO-220 AB C67078-S1300-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 26 °C ID 23 A Pulsed drain current TC = 25 °C IDpuls 92 Avalanche current,limited by Tjmax IAR 23 Avalanche energy,periodic limited by Tjmax EAR 1.3 mJ Avalanche energy, single pulse ID = 23 A, VDD = 25 V, RGS = 25 Ω L = 15.1 µH, Tj = 25 °C EAS 8 Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 75 W Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 1.67 K/W Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 |
同様の部品番号 - BUZ10 |
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同様の説明 - BUZ10 |
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