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BUZ111SL データシート(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ111SL データシート(HTML) 1 Page - Siemens Semiconductor Group |
1 / 8 page Semiconductor Group 1 28/Jan/1998 BUZ111SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL 55 V 80 A 0.01 Ω TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 100 °C ID 80 A Pulsed drain current TC = 25 °C IDpuls 320 Avalanche energy, single pulse ID = 80 A, VDD = 25 V, RGS = 25 Ω L = 220 µH, Tj = 25 °C EAS 700 mJ Avalanche current,limited by Tjmax IAR 80 A Avalanche energy,periodic limited by Tjmax EAR 25 mJ Reverse diode dv/dt IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C dv/dt 6 kV/µs Gate source voltage VGS ± 14 V Power dissipation TC = 25 °C Ptot 250 W |
同様の部品番号 - BUZ111SL |
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同様の説明 - BUZ111SL |
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