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KF5N50PZ データシート(PDF) 2 Page - KEC(Korea Electronics) |
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KF5N50PZ データシート(HTML) 2 Page - KEC(Korea Electronics) |
2 / 6 page 2011. 2. 7 2/6 KF5N50PZ Revision No : 0 ELECTRICAL CHARACTERISTICS (Tc=25 ℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250㎂ , VGS=0V 500 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃ - 0.55 - V/ ℃ Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10 ㎂ Gate Threshold Voltage Vth VDS=VGS, ID=250㎂ 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±25V, VDS=0V - - ±10 ㎂ Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.5A - 1.15 1.4 Ω Dynamic Total Gate Charge Qg VDS=400V, ID=5A VGS=10V (Note4,5) - 12 - nC Gate-Source Charge Qgs - 2.4 - Gate-Drain Charge Qgd - 5.4 - Turn-on Delay time td(on) VDD=250V RL=50Ω RG=25Ω (Note4,5) - 22.5 - ns Turn-on Rise time tr - 29 - Turn-off Delay time td(off) - 58 - Turn-off Fall time tf - 18 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 430 - pF Output Capacitance Coss - 71 - Reverse Transfer Capacitance Crss - 7.5 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 5 A Pulsed Source Current ISP - - 20 Diode Forward Voltage VSD IS=5A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=5A, VGS=0V, dIs/dt=100A/ ㎲ - 300 - ns Reverse Recovery Charge Qrr - 4.8 - μC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L=19.5mH, IS=5A, VDD=50V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤5A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%. Note 5) Essentially independent of operating temperature. 2 PRODUCT NAME LOT NO 1 101 2 KF5N50 PZ 1 Marking |
同様の部品番号 - KF5N50PZ |
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同様の説明 - KF5N50PZ |
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