BUZ332A datasheet(3/9 Pages) SIEMENS

部品番号	BUZ332A

部品情報	SIPMOS Power Transistor(N Channel)

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メーカー	SIEMENS [Siemens Semiconductor Group]

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3 / 9 page

Semiconductor Group

3

07/96

BUZ 332 A

Electrical Characteristics, at

Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 5 A

gfs

5

8.5

-

S

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Ciss

-

1400

2100

pF

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss

-

180

270

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Crss

-

65

100

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

td(on)

-

20

30

ns

Rise time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

tr

-

70

110

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

td(off)

-

250

330

Fall time

VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50 Ω

tf

-

80

100

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