N0600N

Chapter Title

R07DS0220EJ0100 Rev.1.00

Page 6 of 6

Jan 25, 2011

Package Drawings (Unit: mm)

Isolated TO-220

1. Gate

2. Drain

3. Source

10.0±0.3

3.2±0.2

2.54±0.2

0.8±0.2

2.54 TYP.

2.54 TYP.

1.47 MAX

12 3

4.7±0.2

2.76±0.2

0.50±0.1

Equivalent Circuit

Source

Body

Diode

Gate

Drain

Remark

Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static

electricity as much as possible, and quickly dissipate it once, when it has occurred.