2SC3357 datasheet(4/10 Pages) RENESAS

部品番号	2SC3357

部品情報	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

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Data Sheet PU10211EJ01V0DS

2

2SC3357

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction to Ambient Resistance

Rth (j-a)

Note

62.5

°C/W

Note Mounted on 16 cm

2

× 0.7 mm (t) ceramic substrate

ELECTRICAL CHARACTERISTICS (TA = +25

°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 10 V, IE = 0 mA

–

1.0

µA

Emitter Cut-off Current

IEBO

VEB = 1.0 V, IC = 0 mA

–

1.0

µA

DC Current Gain

hFE

Note 1

VCE = 10 V, IC = 20 mA

50

120

250

–

RF Characteristics

Gain Bandwidth Product

fT

VCE = 10 V, IC = 20 mA

–

6.5

–

GHz

Insertion Power Gain

S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz

–

9.0

–

dB

Noise Figure (1)

NF

VCE = 10 V, IC = 7 mA, f = 1 GHz

–

1.1

–

dB

Noise Figure (2)

NF

VCE = 10 V, IC = 40 mA, f = 1 GHz

–

1.8

3.0

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 10 V, IE = 0 mA, f = 1 MHz

–

0.65

1.0

pF

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal

capacitance bridge.

hFE CLASSIFICATION

Rank

RH

RF

RE

Marking

RH

RF

RE

hFE Value

50 to 100

80 to 160

125 to 250

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