AM30N10-50D datasheet(1/3 Pages) ANALOGPOWER

部品番号	AM30N10-50D

部品情報	N-Channel 100-V (D-S) MOSFET

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AM30N10-50D

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM30N10-50_A

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

rDS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

VDS (V)

rDS(on) m( )

ID (A)

50 @ VGS = 10V

26

59 @ VGS = 4.5V

24

PRODUCT SUMMARY

100

N-Channel 100-V (D-S) MOSFET

•

Low rDS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

DPAK saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol

Limit

Units

VDS

100

VGS

±20

Continuous Drain Current

a

TC=25

o

C ID

20

IDM

36

IS

30

A

Power Dissipation

a

TC=25

o

C PD

50

W

TJ, Tstg -55 to 175

o

C

Operating Junction and Storage Temperature Range

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUMRATINGS (TA = 25

oCUNLESSOTHERWISENOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

A

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

a

RθJA

50

oC/W

Maximum Junction-to-Case

RθJC

3.0

oC/W

THERMAL RESISTANCE RATINGS

同様の部品番号 - AM30N10-50D

メーカー	部品番号	データシート	部品情報
Analog Power	AM30N10-70D	189Kb / 5P	N-Channel 100-V (D-S) MOSFET
SHENZHEN DOINGTER SEMIC...	AM30N10-70D	2Mb / 5P	N-Channel MOSFET uses advanced SGT technology
VBsemi Electronics Co.,...	AM30N10-70D-T1-PF	985Kb / 8P	N-Channel 100-V (D-S) MOSFET
Analog Power	AM30N10-70DE	150Kb / 5P	N-Channel 100-V (D-S) MOSFET
VBsemi Electronics Co.,...	AM30N10-70DE-T1-PF	982Kb / 8P	N-Channel 100-V (D-S) MOSFET

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同様の説明 - AM30N10-50D

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