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1N40G-T92-B データシート(PDF) 2 Page - Unisonic Technologies |
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1N40G-T92-B データシート(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 1N40 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R502-529.b ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Continuous (TC=25°C) ID 1.4 A Drain Current Pulsed (Note 2) IDM 5.6 A Avalanche Current (Note 2) IAR 1.4 A Single Pulsed (Note 3) EAS 85 mJ Avalanche Energy Repetitive (Note 2) EAR 2.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 25 W Power Dissipation TO-92 2.5 W TO-220 0.2 W/°C Derate above 25°C TO-92 PD 0.02 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 75mH, IAS = 1.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 1.8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-220 62.5 Junction to Ambient TO-92 θJA 140 °C/W TO-220 5.0 Junction to Case TO-92 θJC 50 °C/W |
同様の部品番号 - 1N40G-T92-B |
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同様の説明 - 1N40G-T92-B |
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