SB320ET-G datasheet(2/3 Pages) COMCHIP

部品番号	SB320ET-G

部品情報	ESD Leaded Schottky Barrier Rectifiers

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メーカー	COMCHIP [Comchip Technology]

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RATING AND CHARACTERISTIC CURVES (

)

SB320E-G Thru. SB3100E-G

Page 2

QW-BB042

REV:A

Fig.1- Forward Current Derating Curve

0

O

Lead Temperature, ( C)

0

75

175

Fig.2- Maximum Non-repetitive Peak

Forward Surge Current

Number of Cycles at 60Hz

Fig.3- Typical Instantaneous Forward

Characteristics

Instantaneous Forward Voltage (V)

50

100

125

1.2

2.4

3.6

Fig.4A- Typical Reverse Characteristics

Percent of Rated Peak Reverse Voltage (%)

25

150

Fig.5- Typical Junction Capacitance

Reverse Voltage, (V)

ESD Leaded Schottky Barrier Rectifiers

3.0

1.8

0.6

Comchip Technology CO., LTD.

0

20

40

60

80

100

120

140

100

10

1.0

0.1

0.01

0.001

Fig. 4B- Typeical Reverse Characteristic

Percent of Rated Peak Reverse Voltage, ( %)

1

10

100

1

10

100

TL=110°C

8.3mS single half sine-wave

(JEDEC Method)

0

0.2

0.4

0.6

0.8

1.0

100

10

1.0

0.1

SB380E-G - SB3100E-G

SB350E-G - SB360E-G

SB320E-G - SB345E-G

TJ=25°C

TJ=75°C

TJ=125°C

SB320E-G - SB345E-G

0.1

1.0

10

100

1000

10

TJ=25°C

f=1.0MHz

1000

100

10

1.0

0.1

0

20

40

60

80

100

SB350E-G - SB3100E-G

TJ=100°C

TJ=125°C

TJ=150°C

TJ=25°C

SB320E-G ~ SB345E-G

SB350E

~ SB3100E

-G

single phase half wave 60Hz

resistive or inductive load

3.75”(9.5mm) lead length

Comchip

S M D D i o d e S p e c i a l i s t

同様の部品番号 - SB320ET-G

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