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SMBT2907 データシート(PDF) 2 Page - Siemens Semiconductor Group

部品番号 SMBT2907
部品情報  PNP Silicon Switching Transistors
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メーカー  SIEMENS [Siemens Semiconductor Group]
ホームページ  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

SMBT2907 データシート(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
SMBT 2907
SMBT 2907 A
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Base-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
V
Collector-emitter breakdown voltage
IC = 10 mA
SMBT 2907
SMBT 2907 A
V(BR)CE0
40
60
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
IC = 10
µA
SMBT 2907
SMBT 2907 A
V(BR)CB0
60
60
Emitter-base breakdown voltage
IE = 10
µA
V(BR)EB0
5––
nA
Emitter cutoff current
VEB = 3 V
IEB0
––10
nA
nA
µA
µA
Collector cutoff current
VCB = 50 V
SMBT 2907
VCB = 50 V
SMBT 2907 A
VCB = 50 V, TA = 150 ˚C
SMBT 2907
VCB = 50 V, TA = 150 ˚C
SMBT 2907 A
ICB0
20
10
20
10
DC current gain1)
IC = 100
µA, VCE = 10 V
SMBT 2907
SMBT 2907 A
IC =
1 mA, VCE = 10 V
SMBT 2907
SMBT 2907 A
IC = 10 mA, VCE = 10 V1)
SMBT 2907
SMBT 2907 A
IC = 150 mA, VCE = 10 V1)
SMBT 2907
SMBT 2907 A
IC = 500 mA, VCE = 10 V1)
SMBT 2907
SMBT 2907 A
hFE
35
75
50
100
75
100
100
100
30
50
300
300
V
VCEsat
0.4
1.6
VBEsat
1.3
2.6
1)
Pulse test conditions: t
300 µs, D = 2 %.


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