1N914 datasheet(1/2 Pages) FRONTIER

部品番号	1N914

部品情報	SILICON EPITAXIAL PLANAR DIODE

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メーカー	FRONTIER [Frontier Electronics.]

ホームページ	http://www.frontierusa.com

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1N914 1N914A 1N914B

Page: 1

Frontier Electronics Corp.

667 E. COCHRAN STREET, SIMI VALLEY, CA 93065

TEL: (805) 522-9998

FAX: (805) 522-9989

E-mail: frontiersales@frontierusa.com

Web: http://www.frontierusa.com

SILICON EPITAXIAL PLANAR DIODE

1N914 1N914A 1N914B

FEATURES

FAST SWITCHING

SMALL BODY

MECHANICAL DATA

CASE GLASS, DO35, DIMENSIONS IN INCHES AND (MILLIMETERS)

LEADS SOLDERABLE PER MIL-STD-202, METHOD 208

POLARITY CATHODE INDICATED BY COLOR BAND

WEIGHT 0.13 GRAMS

RATINGS

SYMBOL

1N914

1N914A

1N914B

UNITS

REVERSE VOLTAGE

VR

75

V

PEAK REVERSE VOLTAGE

VRM

100

V

RECTIFIED CURRENT (AVERAGE)

HALF WAVE RECTIFICATION WITH RESIST LOAD

AT Tamb=25 ºC AND ≥ 50Hz.

IO

75

mA

SURGE FORWARD CURRENT AT T < 1 s AND TJ=25 ºC

IFSM

500

mA

POWER DISSIPATION AT Tamb=25 ºC

PTOT

500

mW

JUNCTION TEMPERATURE

TJ

200

ºC

STORAGE TEMPERATURE RANGE

TS

- 55 TO + 200

ºC

ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOTED)

CHARACTERISTICS

SYMBOL

MIN

TYP

MAX

UNITS

FORWARD VOLTAGE AT IF=10mA

( 1N914 )

FORWARD VOLTAGE AT IF=20mA

( 1N914A )

FORWARD VOLTAGE AT IF=100mA

( 1N914B )

VF

-

1

V

LEAKAGE CURRENT

AT VR=20V

AT VR=75V

AT VR=20V TJ=150 ºC

IR

-

25

5

50

nA

μA

REVERSE BREAKDOWN VOLTAGE

TESTED WITH 100

μA PULSES

VR

100

-

V

CAPACITANCE AT VF=VR=0

CTOT

-

4

PF

VOLTAGE RISE WHEN SWITCHING ON

TESTED WITH 50mA FORWARD PULSES

TP=0.1

μS RISE TIME

＜30ns F

P=50 TO 100 KHZ

VFR

-

2.5

V

REVERSE RECOVERY TIME

FROM IF=10mA TO IR=1mA VR=6V RL=100Ω

TRR

-

4

nS

THERMAL RESISTANCE

FUNCTION TO AMBLENT AIR

RTHA

-

0.35

K / mW

RECTIFICATION EFFICIENCY

AT F=100 MHZ VRF=2V

NV

0.45

-

0.52

∅

27.5

MIN

1.9

∅

3.9

∅

同様の部品番号 - 1N914

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	1N914	51Kb / 8P	High-speed diode 1999 May 26
Vishay Siliconix	1N914	71Kb / 3P	Small Signal Fast Switching Diodes Rev. 1.8, 06-Dec-13
Microsemi Corporation	1N914	63Kb / 1P	Silicon Switching Diode DO-35 Glass Package
New Jersey Semi-Conduct...	1N914	44Kb / 1P	Small Signal Devices
Vishay Siliconix	1N914	113Kb / 4P	Fast Switching Diodes Rev. 1.7, 16-Feb-07

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