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CSD23201W10 データシート(PDF) 4 Page - Texas Instruments |
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CSD23201W10 データシート(HTML) 4 Page - Texas Instruments |
4 / 8 page −VDS − Drain to Source Voltage − V 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 G001 VGS = −1.2V VGS = −2.5V VGS = −4.5V VGS = −3V VGS = −1.5V −VGS − Gate to Source Voltage − V 0 1 2 3 4 5 0.50 0.75 1.00 1.25 1.50 1.75 2.00 G002 VDS = −5V TC = −55°C TC = 25°C TC = 125°C Qg − Gate Charge − nC 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 G003 ID = −0.5A VDS = −6V −VDS − Drain to Source Voltage − V 0 50 100 150 200 250 300 0 2 4 6 8 10 12 G004 f = 1MHz, VGS = 0V CRSS = CGD COSS = CDS + CGD CISS = CGD + CGS TC − Case Temperature − °C 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 −75 −25 25 75 125 175 G005 ID = −250µA −VGS − Gate to Source Voltage − V 0 20 40 60 80 100 120 140 160 180 200 0 1 2 3 4 5 6 G006 ID = −0.5A TC = 125°C TC = 25°C CSD23201W10 SLPS209A – AUGUST 2009 – REVISED MAY 2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics Figure 4. Gate Charge Figure 5. Capacitance Figure 6. Threshold Voltage vs. Temperature Figure 7. On Resistance vs. Gate Voltage 4 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD23201W10 |
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