TYN20X-800T datasheet(3/12 Pages) NXP

部品番号	TYN20X-800T

部品情報	SCR

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NXP Semiconductors

TYN20X-800T

SCR

TYN20X-800T

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Product data sheet

23 July 2012

3 / 12

Symbol

Parameter

Conditions

Min

Max

Unit

half sine wave; Tj(init) = 25 °C;

tp = 10 ms; Fig. 4; Fig. 5

-

210

A

ITSM

non-repetitive peak on-state

current

half sine wave; Tj(init) = 25 °C;

tp = 8.3 ms

-

231

A

I2t

I2t for fusing

tp = 10 ms; sine-wave pulse

-

220.5 A2s

dIT/dt

rate of rise of on-state current

IT = 40 A; IG = 200 mA; dIG/

dt = 200 mA/µs

-

50

A/µs

IGM

peak gate current

-

5

A

VRGM

peak reverse gate voltage

-

5

V

PGM

peak gate power

-

20

W

PG(AV)

average gate power

over any 20 ms period

-

1

W

Tstg

storage temperature

-40

150

°C

Tj

junction temperature

-

150

°C

003aaj873

0

5

10

15

20

25

-50

0

50

100

150

Th (°C)

IT(RMS)

(A)

75 °C

Fig. 1. RMS on-state current as a function of heatsink

temperature; maximum values

003aaj875

0

30

60

90

120

10-2

10-1

1

10

surge duration (s)

IT(RMS)

(A)

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

同様の部品番号 - TYN20X-800T

メーカー	部品番号	データシート	部品情報
WeEn Semiconductors	TYN20X-800T	301Kb / 12P	SCR

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