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TSC2011 データシート(PDF) 3 Page - Texas Instruments |
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TSC2011 データシート(HTML) 3 Page - Texas Instruments |
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3 / 8 page  TSC2011 www.ti.com SBAS516 – NOVEMBER 2011 ELECTRICAL CHARACTERISTICS At TA = –40°C to +85°C, VDD = +1.2V to +3.6V, HVDD = 1.2V to 3.6V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNITS AUXILARY ANALOG INPUTS Input voltage range 0 VDD V ADC sampling capacitance 15 pF Input leakage current No ADC conversion –1 +1 µA Full-scale average input current VDD = 1.6V, continuous AUX, fADC = 2 MHz ±2 µA ANALOG-TO-DIGITAL CONVERTER Resolution Programmable: 10 or 12 bits 12 Bits No missing codes 12-bit resolution 11 Bits Integral linearity 12-bit resolution, fADC = 2 MHz –2 ±0.5 +2 LSB(1) Differential linearity 12-bit resolution, fADC = 2 MHz –2 ±0.5 +2 LSB TSC2011IRTJ –5 1 +5 VDD = 1.6V, 12-bit resolution, fADC = Offset error LSB 2 MHz TSC2011IYZK 1 TSC2011IRTJ –3 0 +3 VDD = 1.6V, 12-bit resolution, fADC = Gain error LSB 2 MHz TSC2011IYZK 0 TOUCH SENSORS X+ 50k Ω pull-up resistor, RIRQ 50 K Ω X, Y drivers on-resistance TA = +25°C, VDD = 1.6V, 1mA test current 7 Ω Max resistance X+, X – 1 difference between Ω Y+, Y – 1 drivers X, Y drivers drive current(2) 100ms duration 50 mA INTERNAL TEMPERATURE SENSOR Temperature range –40 +85 °C VDD = 1.6V 1 Differential °C/LSB method(3) VDD = 3V 1.88 Resolution VDD = 1.6V 0.19 TEMP1(4) °C/LSB VDD = 3V 0.36 TSC2011IRTJ 2.575 Differential temperature coefficient °C/mV TSC2011IYZK 2.560 INTERNAL OSCILLATOR VDD = 1.6V, TA = 25°C 3.3 3.8 4.3 Clock frequency, fOSC MHz VDD = 3.0V, TA = 25°C 4 VDD = 1.6V ±0.01 Frequency drift %/C VDD = 3.0V –0.02 HAPTIC FEEDBACK CONTROL/PORT Haptic voltage range HVDD 1.2 3.6 V Maximum haptic driving current, HVDD = 3.3V, With over current protection on 250 mA H+/U+ and H –/U– pins Haptic quiescent current HVDD = 3.3V, Internal bridge, No load, TPWM = 50 µs, TA = 25°C 80 µA Haptic powerdown current HVDD = 3.3V, Driver OFF, TA = 25°C 0.07 µA HVDD = 3.3V, TA = 25°C 0.5 1.5 4 Ω RDS(ON) resistance HVDD = 2.0V, TA = 25°C 2 Ω Over Current protection limit HVDD = 3.3V, OVF set to "1" if over current detected 175 250 310 mA Leakage current H+/U+ and H –/U– pins –1 1 µA (1) LSB means Least Significant Bit. With VDD = 1.6V, one LSB is 390µV. (2) Assured by design, but not tested. Exceeding 50mA source current may result in device degradation. (3) Difference between TEMP1 and TEMP2 measurement; no calibration necessary. (4) Temperature drift: TEMP1 = –2.024mV/°C, TEMP2 = –1.661mV/°C. Copyright © 2011, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TSC2011 |
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同様の説明 - TSC2011 |
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