SI4090DY datasheet(4/10 Pages) VISHAY

部品番号	SI4090DY

部品情報	N-Channel 100 V (D-S) MOSFET

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Document Number: 63917

S12-1135-Rev. A, 21-May-12

Vishay Siliconix

Si4090DY

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical support, please contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 150 °C

T

J = 25 °C

- 0.8

- 0.6

- 0.4

- 0.2

0.2

0

0.4

- 50

- 25

0

25

50

75

100

125

150

T

J - Temperature (°C)

I

D = 250 μA

I

D = 5 mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.01

0.02

0.03

0.04

0.05

02468

10

V

GS - Gate-to-Source Voltage (V)

T

J = 125 °C

T

J = 25 °C

I

D = 15 A

0

40

80

120

160

200

0.001

0.01

0.1

1

10

Time (s)

Safe Operating Area, Junction-to-Ambient

0.01

0.1

1

10

100

0.01

0.1

1

10

100

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 μs

100 ms

Limited by R

DS(on)*

1 ms

I

DM Limited

T

A = 25 °C

Single Pulse

BVDSS Limited

10 ms

10 s

1 s

DC

I

D Limited

同様の部品番号 - SI4090DY

メーカー	部品番号	データシート	部品情報
Vishay Telefunken	SI4090DY	276Kb / 10P	N-Channel 100 V (D-S) MOSFET
Vishay Siliconix	SI4090DY-T1-GE3	216Kb / 9P	N-Channel 100 V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI4090DY	216Kb / 9P	N-Channel 100 V (D-S) MOSFET 01-Jan-2022

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同様の説明 - SI4090DY

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