J112 datasheet(4/5 Pages) ONSEMI

部品番号	J112

部品情報	JFET Chopper Transistors N.Channel . Depletion

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J111, J112

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4

NOTE 2

The Zero−Gate−Voltage Drain Current (IDSS), is the

principle determinant of other J-FET characteristics.

Figure 10 shows the relationship of Gate−Source Off

Voltage (VGS(off) and Drain−Source On Resistance

(rds(on)) to IDSS. Most of the devices will be within

±10%

of the values shown in Figure 10. This data will be useful

in predicting the characteristic variations for a given part

number.

For example:

Unknown

rds(on) and VGS range for an J112

The electrical characteristics table indicates that an J112

has an IDSS range of 25 to 75 mA. Figure 10, shows

rds(on) = 52

W for IDSS = 25 mA and 30 W for

IDSS = 75 mA. The corresponding VGS values are 2.2 V

and 4.8 V.

2.0

3.0

5.0

7.0

10

20

0.5 0.7

1.0

2.0

3.0

5.0 7.0 10

20

30

50

ID, DRAIN CURRENT (mA)

Figure 6. Typical Forward Transfer Admittance

1.0

1.5

2.0

3.0

5.0

7.0

10

15

0.03 0.05

0.1

0.3 0.5

1.0

3.0 5.0

10

30

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Typical Capacitance

200

160

120

80

40

0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

VGS, GATE−SOURCE VOLTAGE (VOLTS)

Figure 8. Effect of Gate−Source Voltage

On Drain−Source Resistance

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

−70

−40

−10

20

50

80

110

140

170

Tchannel, CHANNEL TEMPERATURE (°C)

Figure 9. Effect of Temperature On

Drain−Source On−State Resistance

J113

J112

J111

Tchannel = 25°C

VDS = 15 V

Cgs

Cgd

Tchannel = 25°C

(Cds IS NEGLIGIBLE)

IDSS

= 10

mA

25

mA

50mA

75mA 100mA

125mA

Tchannel = 25°C

ID = 1.0 mA

VGS = 0

10

IDSS, ZERO−GATE−VOLTAGE DRAIN CURRENT (mA)

Figure 10. Effect of IDSS On Drain−Source

Resistance and Gate−Source Voltage

20 30

40 50 60

70 80 90 100 110 120 130 140 150

10

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0

100

90

80

70

60

50

40

30

20

10

0

Tchannel = 25°C

rDS(on) @ VGS = 0

VGS(off)

同様の部品番号 - J112

メーカー	部品番号	データシート	部品情報
Motorola, Inc	J112	110Kb / 4P	JFET Chopper Transistor (N-Channel- Depletion)
Fairchild Semiconductor	J112	157Kb / 6P	This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers
ON Semiconductor	J112	110Kb / 4P	JFET Chopper Transistor 1997
Vishay Siliconix	J112	58Kb / 6P	N-Channel JFETs Rev. E, 04-Jun-01
NXP Semiconductors	J112	35Kb / 6P	N-channel silicon field-effect transistors July 1993

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同様の説明 - J112

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	BSR58LT1	92Kb / 4P	JFET Chopper Transistor N?묬hannel ??Depletion August, 2005 ??Rev. 1
Motorola, Inc	J112	110Kb / 4P	JFET Chopper Transistor (N-Channel- Depletion)
ON Semiconductor	2N5638	35Kb / 4P	JFET Chopper Transistors September, 2001 ??Rev. 3

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