MC14012BDR2G datasheet(3/8 Pages) ONSEMI

部品番号	MC14012BDR2G

部品情報	Dual 4-Input NAND Gates

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MC14012B

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ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)

Characteristic

Symbol

VDD

Vdc

− 55_C

25_C

125_C

Unit

Min

Max

Min

Typ

(Note 2)

Max

Min

Max

Output Voltage

“0” Level

Vin = VDD or 0

VOL

5.0

10

15

−

0.05

−

0

0.05

−

0.05

Vdc

“1” Level

Vin = 0 or VDD

VOH

5.0

10

15

4.95

9.95

14.95

−

4.95

9.95

14.95

5.0

10

15

−

4.95

9.95

14.95

−

Vdc

Input Voltage

“0” Level

(VO = 4.5 or 0.5 Vdc)

(VO = 9.0 or 1.0 Vdc)

(VO = 13.5 or 1.5 Vdc)

VIL

5.0

10

15

−

1.5

3.0

4.0

−

2.25

4.50

6.75

1.5

3.0

4.0

−

1.5

3.0

4.0

Vdc

“1” Level

(VO = 0.5 or 4.5 Vdc)

(VO = 1.0 or 9.0 Vdc)

(VO = 1.5 or 13.5 Vdc)

VIH

5.0

10

15

3.5

7.0

11

−

3.5

7.0

11

2.75

5.50

8.25

−

3.5

7.0

11

−

Vdc

Output Drive Current

(VOH = 2.5 Vdc)

Source

(VOH = 4.6 Vdc)

(VOH = 9.5 Vdc)

(VOH = 13.5 Vdc)

IOH

5.0

10

15

– 3.0

– 0.64

– 1.6

– 4.2

−

– 2.4

– 0.51

– 1.3

– 3.4

– 4.2

– 0.88

– 2.25

– 8.8

−

– 1.7

– 0.36

– 0.9

– 2.4

−

mAdc

(VOL = 0.4 Vdc)

Sink

(VOL = 0.5 Vdc)

(VOL = 1.5 Vdc)

IOL

5.0

10

15

0.64

1.6

4.2

−

0.51

1.3

3.4

0.88

2.25

8.8

−

0.36

0.9

2.4

−

mAdc

Input Current

Iin

15

−

± 0.1

−

±0.00001

± 0.1

−

± 1.0

mAdc

Input Capacitance

(Vin = 0)

Cin

−

5.0

7.5

−

pF

Quiescent Current

(Per Package)

IDD

5.0

10

15

−

0.25

0.5

1.0

−

0.0005

0.0010

0.0015

0.25

0.5

1.0

−

7.5

15

30

mAdc

Total Supply Current (Notes 3, 4)

(Dynamic plus Quiescent,

Per Gate, CL = 50 pF)

IT

5.0

10

15

IT = (0.3 mA/kHz) f + IDD/N

IT = (0.6 mA/kHz) f + IDD/N

IT = (0.9 mA/kHz) f + IDD/N

mAdc

2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.

3. The formulas given are for the typical characteristics only at 25_C.

4. To calculate total supply current at loads other than 50 pF:

IT(CL) = IT(50 pF) + (CL − 50) Vfk

where: IT is in mA (per package), CL in pF, V = (VDD − VSS) in volts, f in kHz is input frequency, and k = 0.001 x the number of exercised

gates per package.

同様の部品番号 - MC14012BDR2G

メーカー	部品番号	データシート	部品情報
ON Semiconductor	MC14012BDR2G	150Kb / 9P	B?뭆uffix Series CMOS Gates October, 2006 ??Rev. 7
ON Semiconductor	MC14012BDR2G	105Kb / 7P	Dual 4-Input NAND Gates July, 2014 ??Rev. 11

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同様の説明 - MC14012BDR2G

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