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TF252 データシート(PDF) 2 Page - Sanyo Semicon Device

部品番号 TF252
部品情報  Electret Condenser Microphone Applications
Download  4 Pages
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メーカー  SANYO [Sanyo Semicon Device]
ホームページ  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

TF252 データシート(HTML) 2 Page - Sanyo Semicon Device

  TF252_12 Datasheet HTML 1Page - Sanyo Semicon Device TF252_12 Datasheet HTML 2Page - Sanyo Semicon Device TF252_12 Datasheet HTML 3Page - Sanyo Semicon Device TF252_12 Datasheet HTML 4Page - Sanyo Semicon Device  
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TF252
No. A0841-2/4
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate-to-Drain Breakdown Voltage
V(BR)GDO
IG=--100µA--20
V
Cutoff Voltage
VGS(off)
VDS=2V, ID=1µA--0.1
--0.4
--1.0
V
Zero-Gate Voltage Drain Current
IDSS
VDS=2V, VGS=0V
140*
350*
µA
Forward Transfer Admittance
yfs
VDS=2V, VGS=0V, f=1kHz
0.8
1.4
mS
Input Capacitance
Ciss
VDS=2V, VGS=0V, f=1MHz
3.1
pF
Reverse Transfer Capacitance
Crss
VDS=2V, VGS=0V, f=1MHz
0.95
pF
[Ta=25°C, VCC=2V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]
Voltage Gain
GV
VIN=10mV, f=1kHz
1.0
dB
Reduced Voltage Characteristic
∆GVV
VIN=10mV, f=1kHz, VCC=2.0→1.5V
--0.6
--2.0
dB
Frequency Characteristic
∆Gvf
f=1kHz to 110Hz
--1.0
dB
Total Harmonic Distortion
THD
VIN=30mV, f=1kHz
0.65
%
Output Noise Voltage
VNO
VIN=0V, A curve
--106
--102
dB
*
: The TF252 is classified by IDSS as follows : (unit : µA)
Rank
45
IDSS
140 to 240
210 to 350
Package Dimensions
Test Circuit
unit : mm (typ)
7055-001
ID -- VDS
ID -- VDS
Drain-to-Source Voltage, VDS -- V
Drain-to-Source Voltage, VDS -- V
0
0.5
2.0
1.0
1.5
300
200
250
100
50
150
0
IT12440
VGS=0V
--0.10V
--0.15V
--0.05V
--0.20V
--0.30V
--0.25V
IT12441
01
5
234
350
300
200
250
100
50
150
0
VGS=0V
--0.1V
--0.2V
--0.4V
--0.3V
OSC
5pF
+
33µF
2.2kΩ
VCC=2V
VCC=1.5V
V
VTVM
THD
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
1 : Drain
2 : Source
3 : Gate
SANYO : USFP
0.6
0.2
0.11
0to 0.02
0.15
0.175

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