STP4407 datasheet(2/6 Pages) STANSON

部品番号	STP4407

部品情報	The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

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メーカー	STANSON [Stanson Technology]

ホームページ	http://www.stansontech.com

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2 / 6 page

STP

STP4

4

44

4

407

07

P Channel Enhancement Mode MOSFET

-

12A

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294

FAX: (650) 9389295

STP4407 2009. V1

2

ABSOULTE

ABSOULTE MAXIMUM

MAXIMUM

MAXIMUM RATINGS

RATINGS

RATINGS (Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±23

V

Continuous Drain Current (TJ=150℃)

TA=25℃

TA=70℃

ID

-12

-10

A

Pulsed Drain Current

IDM

-60

A

Continuous Source Current (Diode Conduction)

IS

-30

A

Power Dissipation

TA=25℃

TA=70℃

PD

3.1

2.0

W

Operation Junction Temperature

TJ

-55/150

℃

Storage Temperature Range

TSTG

-55/150

℃

Thermal Resistance-Junction to Ambient

RθJA

70

℃/W

同様の部品番号 - STP4407

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VBsemi Electronics Co.,...	STP4407	898Kb / 9P	P-Channel 30-V (D-S) MOSFET
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