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BA277 データシート(PDF) 9 Page - NXP Semiconductors |
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BA277 データシート(HTML) 9 Page - NXP Semiconductors |
9 / 130 page 10 NXP Semiconductors RF Manual 16th edition Product highlight: BLF8G10LS-160 160 W LDMOS power transistor for base W-CDMA base station and multi-carrier applications at frequencies from 920 to 960 MHz. Features ` Excellent ruggedness ` High efficiency ` Low R th providing excellent thermal stability ` Designed for broadband operation (920 to 960 MHz) ` Lower output capacitance for improved performance in Doherty applications ` Low memory effects for excellent pre-distortability ` Internally matched for ease of use ` Integrated ESD protection ` Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Recommended products Function Product f min (MHz) f max (MHz) P1dB (W) Matching Package Type HPA Driver 700 2200 10 - SOT1179 BLP7G22-10* Driver/final 2110 2170 40 I/O SOT1121 BLF6G22L(S)-40P 2500 2700 40 I/O SOT1121 BLF6G27L(S)-40P MMIC 2000 2200 60 I/O SOT1212 BLM7G22S-60PB(G)* Final 700 1000 160 - SOT467 BLF6H10L(S)-160 700 1000 200 I/O SOT1244C BLF8G10LS-200GV 700 1000 270 I/O SOT1244C BLF8G10LS-270GV 850 960 300 I/O SOT539 BLF8G10L(S)-300P* 900 1000 140 O SOT1224 BLP7G09S-140P(G)* 920 960 160 I/O SOT502 BLF8G10L(S)-160* 920 960 250 I/O SOT502 BLF7G10L(S)-250 1800 1900 260 I/O SOT539B BLF7G20LS-260A* 1805 1880 250 I/O SOT539 BLF7G20L(S)-250P 2000 2200 160 I/O SOT502B BLF7G22L(S)-160* 2000 2200 200 I/O SOT1244C BLF8G22LS-200GV* 2000 2200 270 I/O SOT1244C BLF8G22LS-270GV* 2500 2700 100 I/O SOT502 BLF7G27L(S)-100 2500 2700 140 I/O SOT502 BLF7G27L(S)-140 3400 3600 100 I/O SOT502 BLF6G38(LS)-100 Integrated Doherty 2010 2025 50 O SOT1130 BLD6G21L(S)-50 * Check status in section 3.1, as this type is not yet released for mass production |
同様の部品番号 - BA277 |
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同様の説明 - BA277 |
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