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STPS8H100DEE データシート(PDF) 2 Page - STMicroelectronics |
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STPS8H100DEE データシート(HTML) 2 Page - STMicroelectronics |
2 / 8 page Characteristics STPS8H100DEE 2/8 Doc ID 023272 Rev 1 1 Characteristics To evaluate the conduction losses use the following equation: P = 0.61 x IF(AV) + 0.0088 x IF 2 (RMS) Table 2. Absolute ratings (limiting values Tamb = 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) Forward rms current 15 A IF(AV) Average forward current Tc = 150 °C = 0.5 8 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 100 A P ARM (1) 1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche specification”. Repetitive peak avalanche power tp = 10 µs Tj = 125 °C 480 W Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case 4 °C/W Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 5 ms, < 2% Reverse leakage current Tj = 25 °C VR = VRRM -4.5 µA Tj = 125 °C - 2 6 mA VF (2) 2. Pulse test: tp = 380 µs, < 2% Forward voltage drop Tj = 25 °C IF = 8A 0.82 V Tj = 125 °C - 0.60 0.68 Tj = 25 °C IF = 10A 0.85 Tj = 125 °C - 0.62 0.70 Tj = 25 °C IF = 16A 0.90 Tj = 125 °C - 0.68 0.75 |
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