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STPS40SM60C データシート(PDF) 3 Page - STMicroelectronics |
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STPS40SM60C データシート(HTML) 3 Page - STMicroelectronics |
3 / 10 page STPS40SM60C Characteristics Doc ID 022031 Rev 1 3/10 To evaluate the conduction losses use the following equation: P = 0.415 x IF(AV) + 0.008 x IF 2 (RMS) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM -20 90 µA Tj = 125 °C - 15 50 mA VF (2) Forward voltage drop Tj = 25 °C IF = 10 A - 0.495 0.535 V Tj = 125 °C - 0.405 0.460 Tj = 25 °C IF = 20 A - 0.565 0.625 Tj = 125 °C - 0.510 0.575 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% Figure 2. Average forward power dissipation versus average forward current (per diode) Figure 3. Average forward current versus ambient temperature ( δ = 0.5, per diode) P (W) F(AV) 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 14 16 18 20 22 24 26 T δ = t / T p t p I (A) F(AV) δ = 1 δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 I (A) F(AV) 0 4 8 12 16 20 24 0 25 50 75 100 125 150 T (°C) amb Rth(j-a) = Rth(j-c) Figure 4. Normalized avalanche power derating versus pulse duration Figure 5. Normalized avalanche power derating versus junction temperature 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 P(tp) P (1µs) ARM ARM t (µs) p 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 P(T ) P (25 °C) ARM j ARM T (°C) j |
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