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DM-231 データシート(PDF) 1 Page - Sony Corporation

部品番号 DM-231
部品情報  Magnetoresistance Element
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メーカー  SONY [Sony Corporation]
ホームページ  http://www.sony.co.jp
Logo SONY - Sony Corporation

DM-231 データシート(HTML) 1 Page - Sony Corporation

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E88Z12C5X-TE
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Description
DM-231 a magnetic sensor using magnetoresist-
ance effect is composed of ferromagnetic material
deposited by evaporation on a silicon substrate. It is
suitable for angle of rotation detection.
Features
• Low magnetic field and high sensitivity: bridge type
stands for large output voltage
150 mVp-p (Min.) at VCC=5 V, H=14400 A/m
• Fitted with bias magnet: stable output.
• High reliability: Achieved through silicon nitride
protective film.
Structure
Ferromagnetic thin film circuit (With ferrite magnet)
Applications
• Non-contact angle of rotation detection.
• Contactless potentiometer.
Absolute Maximum Ratings (Ta=25 °C)
• Supply voltage
VCC
10
V
• Storage temperature
Tstg
–30 to +100
°C
Recommended Operating Conditions
• Supply voltage
VCC
5V
• Operating temperature
Topr
–20 to + 75
°C
Magnetoresistance Element
M-118
(Plastic)
DM-231
Electrical Characteristics
Ta=25 °C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Output voltage
Midpoint potential
Midpoint potential
difference/Output voltage
Total resistance
VO
VA, VB
|VA-VB|
VO
RT
VCC=5 V , H=14400 A/m (Peak)
AC magnetic field
θ =0 °
VCC=5 V , H=0 A/m
VCC=5 V , H=0 A/m
H=14400 A/m (Peak)
AC magnetic field
θ =0 °
150
2.475
500
650
2.525
15
800
mVp-p
V
%
For the availability of this product, please contact the sales office.


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