IRF6645TRPBF datasheet(2/9 Pages) IRF

部品番号	IRF6645TRPBF

部品情報	DirectFETPower MOSFET

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メーカー	IRF [International Rectifier]

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July 25, 2012

IRF6645/TRPbF

S

D

G

Electrical Characteristic @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

BVDSS

Drain-to-Source Breakdown Voltage

100

–––

V

VDSS/TJ

Breakdown Voltage Temp. Coefficient

–––

0.12

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

28

35

m



VGS(th)

Gate Threshold Voltage

3.0

–––

4.9

V

VGS(th)/TJ

Gate Threshold Voltage Coefficient

–––

-12

–––

mV/°C

IDSS

Drain-to-Source Leakage Current

–––

20

μA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

100

nA

Gate-to-Source Reverse Leakage

–––

-100

gfs

Forward Transconductance

7.4

–––

S

Qg

Total Gate Charge

–––

14

20

Qgs1

Pre-Vth Gate-to-Source Charge

–––

3.1

–––

Qgs2

Post-Vth Gate-to-Source Charge

–––

0.8

–––

nC

Qgd

Gate-to-Drain Charge

–––

4.8

7.2

Qgodr

Gate Charge Overdrive

–––

5.3

–––

See Fig. 15

Qsw

Switch Charge (Qgs2 + Qgd)

–––

5.6

–––

Qoss

Output Charge

–––

7.2

–––

nC

RG

Gate Resistance

–––

1.0

–––



td(on)

Turn-On Delay Time

–––

9.2

–––

tr

Rise Time

–––

5.0

–––

td(off)

Turn-Off Delay Time

–––

18

–––

ns

tf

Fall Time

–––

5.1

–––

Ciss

Input Capacitance

–––

890

–––

Coss

Output Capacitance

–––

180

–––

pF

Crss

Reverse Transfer Capacitance

–––

40

–––

Coss

Output Capacitance

–––

870

–––

Coss

Output Capacitance

–––

100

–––

Diode Characteristics

Parameter

Min.

Typ.

Max. Units

IS

Continuous Source Current

–––

25

(Body Diode)

A

ISM

Pulsed Source Current

–––

45

(Body Diode)

g

VSD

Diode Forward Voltage

–––

1.3

V

trr

Reverse Recovery Time

–––

31

47

ns

Qrr

Reverse Recovery Charge

–––

40

60

nC

MOSFET symbol

RG=6.2

VDS = 25V

Conditions

VGS = 0V, VDS = 80V, f=1.0MHz

VGS = 0V, VDS = 1.0V, f=1.0MHz

VDS = 16V, VGS = 0V

VDD = 50V, VGS = 10V

i

VGS = 0V

ƒ = 1.0MHz

ID = 3.4A

VDS = VGS, ID = 50μA

VDS = 100V, VGS = 0V

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 5.7A

i

TJ = 25°C, IF = 3.4A, VDD = 50V

di/dt = 100A/μs

c

TJ = 25°C, IS = 3.4A, VGS = 0V

i

showing the

integral reverse

p-n junction diode.

ID = 3.4A

VDS = 80V, VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

VGS = 10V

VDS = 10V, ID = 3.4A

VDS = 50V

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width  400μs; duty cycle  2%.

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