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データシートサーチシステム |
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FGB3236 データシート(PDF) 3 Page - Fairchild Semiconductor |
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FGB3236 データシート(HTML) 3 Page - Fairchild Semiconductor |
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3 / 10 page  FGB3236_F085 / FGI3236_F085 Rev. A www.fairchildsemi.com 3 Electrical Characteristics T A = 25°C unless otherwise noted Dynamic Characteristics Switching Characteristics Thermal Characteristics Symbol Parameter Test Conditions Min Typ Max Units QG(ON) Gate Charge ICE = 10A, VCE = 12V, VGE = 5V, See Fig.14 -20 - nC VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE, See Fig. 10 TC = 25oC 1.3 1.6 2.2 V TC = 150oC 0.75 1.1 1.8 VGEP Gate to Emitter Plateau Voltage VCE = 12V, ICE = 10A - 2.6 - V td(ON)R Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω VGE = 5V, RG = 1KΩ TJ = 25oC, See Fig.12 -0.65 4 µs trR Current Rise Time-Resistive - 1.7 7 µs td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500µHy, VGE = 5V, RG = 1KΩ TJ = 25oC, See Fig.12 - 5.4 15 µs tfL Current Fall Time-Inductive - 1.64 15 µs SCIS Self Clamped inductive Switching TJ = 25oC, L = 3.0mHy, ICE = 14.7A, RG = 1KΩ, VGE = 5V, See Fig.1&2 - - 320 mJ RθJC Thermal Resistance Junction to Case All Packages - - 0.8 oC/W |
同様の部品番号 - FGB3236 |
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同様の説明 - FGB3236 |
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