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FDD5N50NZFTM データシート(PDF) 2 Page - Fairchild Semiconductor |
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FDD5N50NZFTM データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDD5N50NZF Rev. C0 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDD5N50NZF FDD5N50NZFTM D-PAK 380mm 16mm 2500 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25 oC 500 - - V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25 oC- 0.5 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 10 μA VDS = 400V, VGS = 0V,TC = 125 oC - - 100 IGSS Gate to Body Leakage Current VGS = ±25V, VDS = 0V - - ±10 μA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA3.0 - 5.0 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 1.85A - 1.47 1.75 Ω gFS Forward Transconductance VDS = 20V, ID = 1.85A (Note 4) -4.2 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 365 485 pF Coss Output Capacitance - 50 65 pF Crss Reverse Transfer Capacitance - 4 8 pF Qg(tot) Total Gate Charge at 10V VDS = 400V ID = 3.7A VGS = 10V (Note 4, 5) - 9 12 nC Qgs Gate to Source Gate Charge - 2 - nC Qgd Gate to Drain “Miller” Charge - 4 - nC td(on) Turn-On Delay Time VDD = 250V, ID = 3.7A VGS = 10V, RGEN = 25Ω (Note 4, 5) -12 35 ns tr Turn-On Rise Time - 19 50 ns td(off) Turn-Off Delay Time - 31 70 ns tf Turn-Off Fall Time - 22 55 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 3.7 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 14 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 3.7A - - 1.5 V trr Reverse Recovery Time VGS = 0V, ISD = 3.7A dIF/dt = 100A/μs (Note 4) -87 - ns Qrr Reverse Recovery Charge - 0.15 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 23mH, IAS = 3.7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 3.7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics |
同様の部品番号 - FDD5N50NZFTM |
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同様の説明 - FDD5N50NZFTM |
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