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FDD7N60NZ データシート(PDF) 1 Page - Fairchild Semiconductor |
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FDD7N60NZ データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page December 2010 ©2010 Fairchild Semiconductor Corporation FDD7N60NZ / FDU7N60NZ Rev. A www.fairchildsemi.com 1 UniFET-II TM MOSFET Maximum Ratings T C = 25 oC unless otherwise noted* Thermal Characteristics Symbol Parameter FDD7N60NZ/FDU7N60NZ Units VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±25 V ID Drain Current -Continuous (TC = 25 oC) 5.5 A -Continuous (TC = 100 oC) 3.3 IDM Drain Current - Pulsed (Note 1) 22 A EAS Single Pulsed Avalanche Energy (Note 2) 347 mJ IAR Avalanche Current (Note 1) 5.5 A EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns PD Power Dissipation (TC = 25 oC) 90 W - Derate above 25oC0.7 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FDD7N60NZ/FDU7N60NZ Units RJC Thermal Resistance, Junction to Case 1.4 oC/W RJA Thermal Resistance, Junction to Ambient 90 FDD7N60NZ / FDU7N60NZ N-Channel MOSFET 600V, 5.5A, 1.25 Features •RDS(on) = 1.05 ( Typ.)@ VGS = 10V, ID = 2.75A • Low Gate Charge ( Typ. 13nC) •Low Crss ( Typ. 7pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability •RoHS Compliant Description These N-Channel enhancement mode power field effect tran- sistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- cient switching mode power supplies and active power factor correction. G S D G S D G S D D-PAK I-PAK G D S |
同様の部品番号 - FDD7N60NZ_10 |
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同様の説明 - FDD7N60NZ_10 |
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